Transient Thermal Analysis of Pulsed Silicon SDR IMPATT at 35 GHz
نویسندگان
چکیده
In this paper the transient thermal analysis of 35 GHz pulsed silicon Single-Drift Region (SDR) Impact Avalanche Transit Time (IMPATT) device is presented. A double-iterative field maximum computer method based on drift-diffusion model is used to obtain the DC and high frequency properties of the device. A transient thermal model has been developed by the authors’ to study the temperature transients in pulsed Si SDR IMPATT at 35 GHz. Results show that the device is capable of delivering a peak pulsed power output of 7.40 W with 8.46% DC to RF conversion efficiency. The maximum junction temperature rise is 352.5 K for peak pulsed bias current of 1.08 Ampere with 200 ns pulsewidth and 1.0% duty cycle.
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تاریخ انتشار 2013